دیتاشیت STP65NF06
مشخصات دیتاشیت
| نام دیتاشیت | STD65NF06, STP65NF06 |
|---|---|
| حجم فایل | 337.207 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 14 |
دانلود دیتاشیت STD65NF06, STP65NF06 |
STD65NF06, STP65NF06 Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STP65NF06
- Power Dissipation (Pd): 110W
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 60A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@10V,30A
- Package: TO-220AB-3
- Manufacturer: STMicroelectronics
- Series: STripFET™ II
- Packaging: Tube
- Part Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
- Base Part Number: STP65N
- detail: N-Channel 60V 60A (Tc) 110W (Tc) Through Hole TO-220AB
